Dynamics of multi-section DFB semiconductor laser: Traveling wave and mode approximation models

Nonlinear dynamical effects of a multi-section DFB semiconductor laser such as self-pulsations or hysteresis can be described by the traveling wave model. The present paper demonstrates that such a model can be effectively approximated by a low dimensional system of ordinary differential equations where only few dynamically varying longitudinal modes of optical field are taken into account. A bifurcation analysis of the reduced models allow us to identify the mechanisms of switching on and switching off of the self-pulsations by tuning model parameters. An explanation of hysteresis is given as well

Longitudinal modes of multisection semiconductor lasers and their dynamics

We simulate and analyse a 1D-PDE model describing the dynamics of multisection semiconductor lasers. We demonstrate how a semi-analytical computation of the spectrum and the corresponding eigenfunction expansion of the computed solutions provides a useful information allowing to achieve a better understanding of the laser dynamics. Basic algorithms implemented into a corresponding software tool are described

Impact of the capture time on the series resistance of quantum-well diode lasers

Electrons and holes injected into a semiconductor heterostructure containing quantum wellsare captured with a finite time. We show theoretically that this very fact can cause a considerableexcess contribution to the series resistivity and this is one of the main limiting factors to higherefficiency for GaAs based high-power lasers. The theory combines a standard microscopic-basedmodel for the capture-escape processes in the quantum well with a drift-diffusion description ofcurrent flow outside the quantum well. Simulations of five GaAs-based devices differing in theirAl-content reveal the root-cause of the unexpected and until now unexplained increase of theseries resistance with decreasing heat sink temperature measured recently. The finite capturetime results in resistances in excess of the bulk layer resistances (decreasing with increasingtemperature) from 1 mΩ up to 30 mΩ in good agreement with experiment

Dynamics in high-power diode lasers

High-power broad-area diode lasers (BALs) exhibit chaotic spatio-temporal dynamics above threshold. Under high power operation, where they emit tens of watts output, large amounts of heat are generated, with significant impact on the laser operation. We incorporate heating effects into a dynamical electro-optical (EO) model for the optical field and carrier dynamics along the quantum-well active zone of the laser. Thereby we effectively couple the EO and heat-transport (HT) solvers. Thermal lensing is included by a thermally-induced contribution to the index profile. The heat sources obtained with the dynamic EO-solver exhibit strong variations on short time scales, which however have only a marginal impact on the temperature distribution. We consider two limits: First, the static HT-problem, with time-averaged heat sources, which is solved iteratively together with the EO solver. Second, under short pulse operation the thermally induced index distribution can be obtained by neglecting heat flow. Although the temperature increase is small, a waveguide is introduced here within a few-ns-long pulse resulting in significant near field narrowing. We further show that a beam propagating in a waveguide structure utilized for BA lasers does not undergo filamentation due to spatial holeburning. Moreover, our results indicate that in BALs a clear optical mode structure is visible which is neither destroyed by the dynamics nor by longitudinal effects

Excitability of a DFB laser with short external cavity

We discuss some aspects of the excitability in a semiconductor laser with short external cavity. It is demonstrated both theoretically and experimentally how a two-section semiconductor laser consisting of a DFB section and an integrated passive phase tuning section performs an excitable response to optical injection. A mode analysis of the model equations allows to understand and explain the origin of the excitability

External cavity modes in Lang--Kobayashi and traveling wave models

We investigate a semiconductor laser with delayed optical feedback due to an external cavity formed by a regular mirror. We discuss similarities and differences of the well-known Lang--Kobayashi delay differential equation model and the traveling wave partial differential equation model. For comparison we locate the continuous wave states in both models and analyze their stability

Efficient coupling of inhomogeneous current spreading and dynamic electro-optical models for broad-area edge-emitting semiconductor devices

We extend a 2 (space) + 1 (time)-dimensional traveling wave model for broad-area edge-emitting semiconductor lasers by a model for inhomogeneous current spreading from the contact to the active zone of the laser. To speedup the performance of the device simulations, we suggest and discuss several approximations of the inhomogeneous current density in the active zone

Semiconductor laser under resonant feedback from a Fabry--Perot: Stability of continuous wave operation

We study the continuous-wave (CW) operation of a semiconductor laser subject to optical feedback from a Fabry-Perot resonator in a case where the emission is resonant to a reflection minimum of the resonator. This configuration is treated in the framework of Lang-Kobayashi equations. The nature of bifurcations and the stability of steady state solutions is analyzed in dependence on magnitude and phase of the feedback. In contrast to conventional optical feedback from a single mirror, the locus of external cavity modes is no more elliptic but represents a tilted eight with possible satellite bubbles. Below a critical feedback strength, which is analytically given, only one single mode exists representing the completely unchanged CW emission of the laser. In this weak-feedback regime, the feedback phase allows a noninvasive control of the CW emission and a tailoring of its small-signal response within wide limits. The obtained results are prototype for all-optical realizations of delayed feedback control

Modeling of current spreading in high-power broad-area lasers and its impact on the lateral far field divergence

The effect of current spreading on the lateral far-field divergence of high-power broad-area lasers is investigated with a time-dependent model using different descriptions for the injection of carriers into the active region. Most simulation tools simply assume a spatially constant injection current density below the contact stripe and a vanishing current density beside. Within the drift-diffusion approach, however, the injected current density is obtained from the gradient of the quasi-Fermi potential of the holes, which solves a Laplace equation in the p-doped region if recombination is neglected. We compare an approximate solution of the Laplace equation with the exact solution and show that for the exact solution the highest far-field divergence is obtained. We conclude that an advanced modeling of the profiles of the injection current densities is necessary for a correct description of far-field blooming in broad-area lasers

Time-dependent simulation of thermal lensing in high-power broad-area semiconductor lasers

We propose a physically realistic and yet numerically applicable thermal model to account for short and long term self-heating within broad-area lasers. Although the temperature increase is small under pulsed operation, a waveguide that is formed within a few-ns-long pulse can result in a transition from a gain-guided to an index-guided structure, leading to near and far field narrowing. Under continuous wave operation the longitudinally varying temperature profile is obtained self-consistently. The resulting unfavorable narrowing of the near field can be successfully counteracted by etching trenches